(NH4)2SxSurface treatment was found to increase the barrier height (φBn) for Au/In0.53Ga0.47As Schottky junctions from 0.26 eV to 0.58 eV at 300 K as determined from Richardson plots. The ideality factorn thus decreased from 2.7 to 1.6 and the reverse saturation current densityJ0 from 9.4 Acm−2 to 3.4×10−5A cm−2. The values of the effective Richardson constant were also evaluated. The chemical state of In0.53Ga0.47As surfaces before and after (NH4)2Sx modification, examined by X-ray photoelectron spectroscopy (XPS), indicated bond formation of S with In, Ga and As.
Polymer Spectroscopy Barrier Height Surface Treatment Bond Formation
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