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Journal of Materials Science

, Volume 30, Issue 19, pp 5031–5035 | Cite as

Schottky barrier height enhancement on n-In0.53Ga0.47As by (NH4)2Sx surface treatment

  • S. T. Ali
  • A. Kumar
  • D. N. Bose
Article

Abstract

(NH4)2SxSurface treatment was found to increase the barrier height (φBn) for Au/In0.53Ga0.47As Schottky junctions from 0.26 eV to 0.58 eV at 300 K as determined from Richardson plots. The ideality factorn thus decreased from 2.7 to 1.6 and the reverse saturation current densityJ0 from 9.4 Acm−2 to 3.4×10−5A cm−2. The values of the effective Richardson constant were also evaluated. The chemical state of In0.53Ga0.47As surfaces before and after (NH4)2Sx modification, examined by X-ray photoelectron spectroscopy (XPS), indicated bond formation of S with In, Ga and As.

Keywords

Polymer Spectroscopy Barrier Height Surface Treatment Bond Formation 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Chapman & Hall 1995

Authors and Affiliations

  • S. T. Ali
    • 1
  • A. Kumar
    • 1
  • D. N. Bose
    • 1
  1. 1.Semiconductor Division, Materials Science CentreIndian Institute of TechnologyKharagpurIndia

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