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Journal of Materials Science

, Volume 30, Issue 19, pp 4890–4895 | Cite as

Transport properties of InSex flash evaporated thin films

  • C. Julien
  • A. Khelfa
  • N. Benramdane
  • J. P. Guesdon
Article

Abstract

Thin films of InSexwere obtained by vacuum evaporation of polycrystalline materials onto substrates at moderate temperatures,Ts. Electrical properties of films grown from different stoichiometries of flash source materials are reported in this work. The temperature dependence of the conductivities shows two conduction regimes. The low temperature regime exhibits aT−1/4 conductivity dependence which fits well, using the Mott model, with an average localized states density value ofN(EF) ≈ 8×1018cm−3eV−1. Hall measurements as a function of temperature show that the predominant conduction mechanism is scattering by grain boundaries in polycystalline films.

Keywords

Thin Film Electrical Property Localize State Transport Property Temperature Regime 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Chapman & Hall 1995

Authors and Affiliations

  • C. Julien
    • 1
  • A. Khelfa
    • 1
  • N. Benramdane
    • 1
  • J. P. Guesdon
    • 1
  1. 1.Laboratoire de Physique des Solides, Associé au CNRSUniversité Pierre et Marie CurieParis Cedex 05France

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