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High resistivity layers of GaAs grown by liquid phase epitaxy

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Abstract

The preparation of high-resistivity undoped GaAs layers is described. The layers were epitaxially grown from the liquid phase on semi-insulating GaAs substrates. Up to 106 Ωcm in resistivity were obtained. The layers are highly compensated. Their temperature behaviour resembles that of Cr-doped semi-insulating bulk material. Additionally it is reported on the doping effect of Cr, Fe, Co, and Ni in the liquid phase epitaxy.

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References

  1. 1.

    F.Sterzer: RCA Review34, 152 (1973)

  2. 2.

    K.Mause, A.Schlachetzki, E.Hesse, H.Salow: IEEE J. Solid-State Circuits SC-10, 2 (1975)

  3. 3.

    D.S.Domanevskii, V.D.Tkachev: Sov. Phys. Semiconductors4, 1790 (1971)

  4. 4.

    E.Grobe, H.Salow: Z. angew. Phys.32, 381 (1972)

  5. 5.

    M.Otsubo, K.Segawa, H.Miki: Japan. J. Appl. Phys.12, 797 (1973)

  6. 6.

    R.W.Haisty, G.R.Cronin: A comparison of doping effects of transition elements in gallium arsenide, Proc. 7th Int. Conf. Phys. Semiconductors (1964) pp. 1161–1167

  7. 7.

    S.M.Sze, J.C.Irvin: Solid-State Electr.11, 599 (1968)

  8. 8.

    V.K.Bazhenov, N.N.Solov'ev: Sov. Phys. Semiconductors5, 1589 (1972)

  9. 9.

    R.Bleekrode, J.Dieleman, H.J.Vegter: Philips Res. Reps.17, 513 (1962)

  10. 10.

    E.M.Ganapol'skii: Sov. Phys. Solid State15, 269 (1973)

  11. 11.

    R.F.Kazarinov N.I.Likicheva, E.M.Omel'yanovskii, L.Ya.Pervova, R.A.Suris: Sov. Phys. Semiconductors4, 1440 (1971)

  12. 12.

    S.S.Li, C.I.Huang: J. Appl. Phys.43, 1757 (1972)

  13. 13.

    O.Madelung:Physics of III–V Compounds (John Wiley & Sons, New York 1964) Ch. 5

  14. 14.

    E.Andre, J.M.LeDuc: Mater. Res. Bull.4, 149 (1969)

  15. 15.

    C.M.Wolfe, G.E.Stillman, J.O.Dimmock: J. Appl. Phys.41, 504 (1970)

  16. 16a.

    S.M.Sze:Physics of Semiconductor Devices (John Wiley & Sons, New York 1969) Ch. 2

  17. 16b.

    K.Seeger:Semiconductor Physics (Springer, Wien, New York 1973) Ch. 3

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Schlachetzki, A., Salow, H. High resistivity layers of GaAs grown by liquid phase epitaxy. Appl. Phys. 7, 195–201 (1975). https://doi.org/10.1007/BF00936024

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Index Headings

  • GaAs
  • Liquid phase epitaxy
  • High resistivity layers