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Low-density dislocation arrays at heteroepitaxial Ge/GaAs-interfaces investigated by high voltage electron microscopy

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Abstract

High-voltage electron microscopy in combination with a large-area thinning technique has been applied to thin epitaxial Ge layers on GaAs substrates. These layers exhibit 60° misfit dislocations along the 〈110〉 directions parallel to the interface. Various dislocation reactions are evaluated from the electron micrographs, e.g. the formation of non-glissile 90° dislocations from two nearly parallel 60° dislocations and the annihilation reaction of two crossing 60° dislocations with identical Burgers vectors. The latter reaction occasionally leads to a dislocation multiplication. The misfit dislocations in very thin layers (∼0.5 μm thickness and a linear dislocation density of less than 100 dislocation lines/cm) tend to be arranged in groups rather than being equidistant. Consequences for the interpretation of x-ray topograms are discussed.

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Strunk, H., Hagen, W. & Bauser, E. Low-density dislocation arrays at heteroepitaxial Ge/GaAs-interfaces investigated by high voltage electron microscopy. Appl. Phys. 18, 67–75 (1979). https://doi.org/10.1007/BF00935905

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PACS

  • 68.55
  • 61.70