High-voltage electron microscopy in combination with a large-area thinning technique has been applied to thin epitaxial Ge layers on GaAs substrates. These layers exhibit 60° misfit dislocations along the 〈110〉 directions parallel to the interface. Various dislocation reactions are evaluated from the electron micrographs, e.g. the formation of non-glissile 90° dislocations from two nearly parallel 60° dislocations and the annihilation reaction of two crossing 60° dislocations with identical Burgers vectors. The latter reaction occasionally leads to a dislocation multiplication. The misfit dislocations in very thin layers (∼0.5 μm thickness and a linear dislocation density of less than 100 dislocation lines/cm) tend to be arranged in groups rather than being equidistant. Consequences for the interpretation of x-ray topograms are discussed.
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Epitaxial Growth, ed. by J. W. Matthews (Academic Press, New York 1975)
W.Hagen, H.J.Queisser: Appl. Phys. Lett.32, 269 (1978)
S.Mader, A.E.Blakeslee, J.Angilello: J. Appl. Phys.45, 4730 (1974)
J.W.Matthews, S.Mader, T.B.Light: J. Appl. Phys.41, 3800 (1970)
J.S.Ahearn, C.Laird: J. Mater. Sci.12, 699 (1977)
W.Hagen: Ph. D. thesis, University of Stuttgart (1978)
Handbook of Electronic Materials, Vol. 5, Group IV Semiconducting Materials, ed. by M. Neuberger (IFI Plenum, New York 1971)
M.S.Abrahams, L.R.Weisberg, C.J.Buiocchi, J.Blanc: J. Mater. Sci.4, 223 (1969)
W.Hagen, H.Strunk: Appl. Phys.17, 85 (1978)
E.Kasper, H.J.Herzog: Thin Solid Films44, 357 (1977)
L.N.Aleksandrov: phys. stat. sol. (a)44, 11 (1977)
J.W.Matthews: Phil. Mag.13, 1207 (1966)
M.F.Ashby, L.M.Brown: Phil. Mag.8, 1083 (1963)
G.H.Schwuttke, J.M.Fairfield: J. Appl. Phys.37, 4394 (1966)
J.W.Matthews: J. Vac. Sci. Technol.12, 126 (1975)
H.Schaumburg: Phil. Mag.25, 1429 (1972)
W.Hagen: J. Cryst. Growth43, 739 (1978)
G.Saada: Acta met.8, 841 (1960)
J.S.Ahearn,Jr., C.Laird, C.A.B.Ball: Thin Solid Films42, 117 (1977)
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Strunk, H., Hagen, W. & Bauser, E. Low-density dislocation arrays at heteroepitaxial Ge/GaAs-interfaces investigated by high voltage electron microscopy. Appl. Phys. 18, 67–75 (1979). https://doi.org/10.1007/BF00935905