An experimental study is described of barrier heights at the junction between (111) faces of semiconductingn-type bulk GaAs and alloyed In−Ge−Ag metal contacts. It is observed that strong corrugation of the semiconducting surface causes the barrier height to be higher than that of flat surfaces.
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H. Hartnagel, B. L. Weiss: J. Mat. Sci.8, 1061 (1973)
W. Tantraporn: J. Appl. Phys.41, 4669 (1970)
F. A. Padovani: InSemiconductors and Semimetals, Vol.7, ed. by Willardson, R. K., and Beer, A. C.: (Academic Press, New York 1971)
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Paria, H., Hartnagel, H. Experimental evidence for GaAs surface quality affecting ohmic contact properties. Appl. Phys. 10, 97–99 (1976). https://doi.org/10.1007/BF00929535