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The effects of carrier degeneracy on transport properties of the double heterostructure injection laser

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Abstract

It is shown that carrier degeneracy plays an important role in determining the electrical properties of double heterostructure injection lasers. Correct statistical treatment of the charge cariers in the device leads to a generalised Einstein relation between the carrier transport coefficients. Such a relation (for both electrons and holes) is used in numerical solutions of semiconductor transport equations applicable to the laser. Experimentally observed I–V characteristics of the laser are explained in terms of carrier degeneracy effects.

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Shore, K.A., Adams, M.J. The effects of carrier degeneracy on transport properties of the double heterostructure injection laser. Appl. Phys. 9, 161–164 (1976). https://doi.org/10.1007/BF00903953

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Index Headings

  • Semiconductor lasers
  • Heterojunction theory
  • I–V characteristics