Springer Nature is making SARS-CoV-2 and COVID-19 research free. View research | View latest news | Sign up for updates

Comment on “Evaluation of concentration-depth profiles by sputtering in SIMS and AES” by S. Hofmann

  • 37 Accesses

  • 21 Citations

Abstract

The statistics of the sputtering process, which has been used to explain sputterbroadening effect due to surface roughness, has been treated with conditional probabilities. This results in the relationship,\({{\Delta z} \mathord{\left/ {\vphantom {{\Delta z} z}} \right. \kern-\nulldelimiterspace} z} \propto \sqrt {(1 + \overline \gamma )/z} \), instead of\({{\Delta z} \mathord{\left/ {\vphantom {{\Delta z} z}} \right. \kern-\nulldelimiterspace} z} \propto {1 \mathord{\left/ {\vphantom {1 {\sqrt z }}} \right. \kern-\nulldelimiterspace} {\sqrt z }}\) derived by S. Hofmann [Appl. Phys.9, 59 (1976)], where δz,z, and\(\overline \gamma \) are the depth resolution, sputtered depth and sputtering yield, respectively.

This is a preview of subscription content, log in to check access.

References

  1. 1.

    G.K.Wehner: InMethods of Surface Anaiysis, ed. by A.W.Czanderna (Elsevier Sci. Pub. Co., New Vork 1975) Chap. 1

  2. 2.

    A.Bennighoven: Z. Physik230, 403 (1970)

  3. 3.

    S.Hofmann: Appl. Phys.9, 59 (1976)

  4. 3a.

    S.Hofmann: Appl. Phys.13, 205 (1977)

  5. 4.

    Reader may refer to W.Schockley, J.R.Pierce: Proc. Inst. Radio Engrs.26, 3 (1938); and as a textbook, for instante, to

  6. 4a

    E.Parzen:Stochastic Processes (Holden-Day, San Francisco 1962)

  7. 5.

    R.Shimizu: Proc. 7th Intern. Vac. Congr. and 3rd Intern. Conf. on Solid Surface: eds. R.Dobrozemsky, F.Rüdenauer, F.P.Viehböck, A.Breth (F.Berger & Söhne, Vienna 1977) p. 1417

  8. 6.

    W.O.Hofer, P.J.Martin: Appl. Phys.16, 271 (1978)

  9. 7.

    S.T.Kang: Ph. D. Thesis (Osaka University, 1978) unpublished

  10. 8.

    S.T.Kang, R.Shimizu: JSPS Technical Committee for micro-analysis Repts., No. 167 (May 1978)

  11. 9.

    M.Kaminsky:Atomic and Ionic Impact Phenomena on Metal Surfaces (Springer, Berlin, Heidelberg, New York 1965) Chap. 10

  12. 10.

    R.Shimizu: Japan. J. Appl. Phys.13, 228 (1974)

Download references

Author information

Rights and permissions

Reprints and Permissions

About this article

Cite this article

Shimizu, R. Comment on “Evaluation of concentration-depth profiles by sputtering in SIMS and AES” by S. Hofmann. Appl. Phys. 18, 425–426 (1979). https://doi.org/10.1007/BF00899698

Download citation

PACS

  • 79.20