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Tunneling through the space charge region in a metal-amorphous silicon contact

Abstract

By solving for the potential barrier profile in metal-amorphous silicon contacts using an exponential distribution of the density of states in the energy spectrum mobility gap, we compute the voltage-current characteristics of such contacts taking into account tunneling through the space charge region. We demonstrate that as the density of states in the middle of the mobility gap increases, such tunneling leads to significant changes in the rectifying properties of a metal-amorphous silicon contact.

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Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 11, pp. 3–7, November, 1986.

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Strikha, V.I., Il'chenko, V.V. Tunneling through the space charge region in a metal-amorphous silicon contact. Soviet Physics Journal 29, 865–868 (1986). https://doi.org/10.1007/BF00898435

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Keywords

  • Silicon
  • Energy Spectrum
  • Potential Barrier
  • Space Charge
  • Exponential Distribution