A calculation is performed and estimates made of the binary correlation functions of the random field produced by the difference in the atomic pseudopotentials of solvent and dissolved materials. Also evaluated are elastic deformation fields in unordered Ge-Si solid replacement solutions with low Si content (up to 10 at. %).
This is a preview of subscription content, log in to check access.
Buy single article
Instant access to the full article PDF.
Price includes VAT for USA
Subscribe to journal
Immediate online access to all issues from 2019. Subscription will auto renew annually.
This is the net price. Taxes to be calculated in checkout.
A. Levitas, Phys. Rev.,99, No. 6, 1810 (1955).
M. Gliksman, Phys. Rev.,100, 1146 (1955).
M. Gliksman, Phys. Rev.,111, No. 1, 125 (1958).
S. Ishida and E. Otzuka, J. Phys. Soc. Jpn.,24, No. 3, 506 (1958).
L. Nodheim, Ann. Phys.,9, 607 (1931).
V. L. Bonch-Bruevich et al., Electronic Theory of Unordered Semiconductors [in Russian], Nauka, Moscow (1981).
O. V. Konstantinov, Sh. K. Nasibullaev, and M. M. Panakhov, Fiz. Tekh. Poluprovodn.,11, No. 5, 881 (1977).
M. A. Krivoglaz, X-Ray and Neutron Diffraction in Nonideal Crystals [in Russian], Naukova Dumka, Kiev (1983).
A. G. Samoilovich and V. D. Iskra, Fiz. Tverd. Tela,11, No.11, 2827.
V. Heine, M. Cohen, and D. Wire, Pseudopotential Theory [Russian translation], Mir, Moscow (1973).
K. Seeger, Semiconductor Physics [Russian translation], Mir, Moscow (1977).
Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 2, pp. 41–46, February, 1987.
The author heartily thanks V. L. Bonch-Bruevich for his interest in the current study and many valuable discussions.
About this article
Cite this article
Iskra, V.D. Random fields in Ge-Si alloys produced by doping. Soviet Physics Journal 30, 126–130 (1987). https://doi.org/10.1007/BF00898150
- Correlation Function
- Random Field
- Elastic Deformation
- Deformation Field
- Replacement Solution