The displacement of boron atoms from silicon lattice sites by silicon interstitial atoms was studied, by galvanomagnetic and x-ray methods. The substitution is controlled by the charge state of the interstitial defects. The charge transfer was effected by a change in the level of ionization during implantation by varying the ion-beam density and during annealing by additional electron bombardment.
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 4, pp. 55–59, April, 1991.
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Berezhnov, N.I., Suprun-Belevich, Y.R., Chelyadinskii, A.R. et al. Charge state of intrinsic interstitial defects and their substitution of boron atoms in the silicon lattice. Soviet Physics Journal 34, 325–328 (1991). https://doi.org/10.1007/BF00898096
- Charge Transfer
- Charge State
- Lattice Site