The stationary photoconductivity, the photomagnetic effect, and the relaxation kinetics of photoconductivity in n-InAs1−x−ySbxPy crystals (x=0.06, y=0.11) with n0 = 8·1015 and 3·1016 cm−3 were measured and the lifetimes of nonequilibrium current carriers in the temperature interval T=78–295 K were determined. The possible mechanisms of recombination, which limit the lifetimes (radiative τR, Auger recombination τA, and recombination through centers with Ef=0.13 eV), which, as is demonstrated, are determined by interband recombination processes with τRA = τRτA/(τR + τA), are calculated theoretically. The contribution of the 0.13 eV recombination centers can be significant when n0≤1014 cm−3.
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 4, pp. 52–54, April, 1991.
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Andrushko, A.I., Salikhov, K.M. & Slobodchikov, S.V. Recombination of nonequilibrium current carriers in n-InAs1−x−ySbxPy . Soviet Physics Journal 34, 322–324 (1991). https://doi.org/10.1007/BF00898095
- Recombination Process
- Recombination Center
- Current Carrier