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Properties of n-type gallium arsenide doped with germanium when single crystals are grown from the melt

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The temperature dependences of the density, mobility, and lifetime of electrons, and the photoconductivity and cathodoluminescence spectra of gallium arsenide with different electron densities doped with germanium when single crystals are grown by the Czochralski method are investigated. An analysis of the scattering mechanism is given, and the acceptor and donor densities are determined. The acceptor-type capture levels are found from the temperature dependence of the electron lifetime. The results of a study of the cathodoluminescence spectra indicate the presence in the specimens of complex radiational recombination centers similar to germanium-atom complexes with inherent lattice defects.

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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 11, pp. 94–98, November, 1983.

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Krivov, M.A., Malisova, E.V., Mel'chenko, É.N. et al. Properties of n-type gallium arsenide doped with germanium when single crystals are grown from the melt. Soviet Physics Journal 26, 1047–1050 (1983). https://doi.org/10.1007/BF00896672

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  • Recombination
  • Gallium
  • Germanium
  • Lattice Defect
  • Arsenide