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Electron structure of bulk centers in gallium arsenide

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Conclusion

Despite the intensive investigation of the electron structure of bulk centers recently observed, much still remains unexplained in this area of semiconductor physics. An example is the situation in the crystals GaAs 〈 Cr 〉.

What is the reason for this and what means exist for further developments in this direction?

First, the perfection of existing theoretical approximations. The main disadvantage of both the band and the local methods is the necessity for high-powered computer computations to obtain a numerical result. Hence, up to now, experimentors most often use the simple theory of a crystalline field in analyzing their results.

Second, further progress in the determination of possible states of bulk centers should be expected after involving more perfect experimental methods that combine magnetic resonance and high pressure techniques, magnetic resonance and polarization optics, etc.

An important new direction in the physics of bulk centers is apparently the study of semiconductors doped by rare-earth elements. There is reason to expect that material suitable for the production of new optoelectronic devices will be obtained here.

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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 10, pp. 45–55, October, 1983.

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Masterov, V.F. Electron structure of bulk centers in gallium arsenide. Soviet Physics Journal 26, 910–919 (1983). https://doi.org/10.1007/BF00896645

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Keywords

  • High Pressure
  • GaAs
  • Experimental Method
  • Gallium
  • Theoretical Approximation