Results are offered from a study of thin film strontium tantalate (SrTa2O6) obtained by vacuum hf deposition. Temperature and frequency dependences of electrical conductivity, ɛ, tan δ, and thermostimulted dielectric depolarization current are studied in Al-SrTa2O6-Al structures. Point defect parameters and their distribution over energy in the dielectric forbidden zone are determined. Polarization and electrical conductivity mechanisms are considered, and it is concluded that strontium tantalate shows promise as a dielectric material for integrated circuits.
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 7, pp. 61–65, July, 1989.
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Kunin, V.Y., Tarnopol'skii, Y.K. & Shturbina, N.A. Electrophysical characteristics of strontium tantalate. Soviet Physics Journal 32, 556–559 (1989). https://doi.org/10.1007/BF00896131
- Thin Film
- Electrical Conductivity
- Frequency Dependence
- Point Defect