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Structure of films and phase transformations in the palladium-silicon contact zone


  1. 1.

    The existence of an amorphous phase consisting of palladium and silicon compounds, was detected in the transition zone of palladium-silicon contacts.

  2. 2.

    The existence of an amorphous phase in the transition zone has a considerable effect on the volt-ampere characteristics (causes a nonlinearity of the VAC) and on the resistance of ohmic contacts.

  3. 3.

    Improvement of VAC of palladium-silicon contacts after their annealing to 400–500‡C can be explained, first, by a crystallization of the amorphous phase of palladium-silicon compounds; secondly, by the formation in the transition zone of polycrystalline palladium suicides (PdSi and Pd2Si).

  4. 4.

    For improving the volt-ampere characteristics of palladium film contacts with silicon, their treatment in the temperature range 400–500‡C for 30 min can be recommended.

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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 5, pp. 21–23, May, 1974.

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Dudko, G.V., Pilipenko, A.G. & Tarakanov, V.I. Structure of films and phase transformations in the palladium-silicon contact zone. Soviet Physics Journal 17, 604–607 (1974).

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  • Silicon
  • Crystallization
  • Palladium
  • Phase Transformation
  • Transition Zone