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Current-voltage characteristics of synthetic semiconductor diamonds doped with boron during synthesis

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Current-voltage characteristics (CVC) of synthetic semiconductor diamonds are presented. In certain low-resistance specimens at definite temperature intervals an N-type CVC is found. Investigations performed permit a qualitative explanation of the majority of CVC peculiarities, and determination of the boron acceptor impurity activation energy Ea = 0.36 eV.

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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 9, pp. 7–12, September, 1978.

In conclusion the authors thank Yu. M. Rotner for presenting the synthetic semiconductor diamonds which were studied.

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Bogdanov, A.V., Presnov, V.A. Current-voltage characteristics of synthetic semiconductor diamonds doped with boron during synthesis. Soviet Physics Journal 21, 1115–1119 (1978). https://doi.org/10.1007/BF00894557

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  • Activation Energy
  • Boron
  • Temperature Interval
  • Qualitative Explanation
  • Impurity Activation