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Growth of a solid AlxGa1as solution on gallium phosphide substrates by the liquid epitaxy method

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Conclusions

  1. 1.

    Monocrystalline films of the solid solution AlxGa1−xAs with x=0.3−0.4 were grown on GaP sub-strates. The films have a smoother surface on the (111) B side of the substrate.

  2. 2.

    The distribution of the composition over the film thickness can be uniform.

  3. 3.

    A microscopic study of the films in visible transmitted light permits additional information to be obtained about the internal perfection of films of the solid solution.

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Literature cited

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    M. B. Panish and S. Sumski, J. Phys. Chem. Solids,30, 129 (1969).

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    R. M. Potemski and J. M. Woodall, J. Electrochem. Soc.,119, 277 (1972).

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    J. M. Woodall, R. M. Potemski, and S. E. Blum, Appl. Phys. Lett.,20, 375 (1972).

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    J. M. Woodall, J. Electrochem. Soc.,118, 150 (1971).

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    E. Andre, J. M. LeDuc, and M. Manieu, J. Cryst. Growth,13/14, 663 (1972).

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    M. Ilegems and G. L. Pearson, Proc. Symp. on GaAs, Dallas (1968).

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Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 3, pp. 146–147, March, 1974.

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Bolkhovityanov, Y.B., Zembatov, K.B. Growth of a solid AlxGa1as solution on gallium phosphide substrates by the liquid epitaxy method. Soviet Physics Journal 17, 421–422 (1974). https://doi.org/10.1007/BF00893971

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Keywords

  • Solid Solution
  • Film Thickness
  • Gallium
  • Microscopic Study
  • Transmitted Light