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Influence of scattering processes on negative magnetoresistance in doped semiconductors

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Abstract

The influence of the processes of scattering of electrons with opposing spins on magnetoresistance in narrow impurity bands is investigated for various different band and temperature values. It is shown that negative magnetoresistance is generated by taking into account the electron-electron scattering.

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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 7, pp. 62–67, July, 1976.

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Didora, T.D., Nitsovich, V.M. Influence of scattering processes on negative magnetoresistance in doped semiconductors. Soviet Physics Journal 19, 878–882 (1976). https://doi.org/10.1007/BF00892906

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Keywords

  • Impurity Band
  • Dope Semiconductor
  • Negative Magnetoresistance
  • Narrow Impurity Band