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The Benard phenomenon in a semiconductor. Influence of the external electric field

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Abstract

It is shown that placing a specimen in an electric field affords the possibility of expanding the class of semiconductors for which light absorption can cause the formation of a periodic electron temperature distribution. The light flux and potential difference necessary for this are estimated.

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Literature cited

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    V. L. Bonch-Bruevich, Zh. Eksp. Teor. Fiz.,67, No. 6(12), 2204 (1974).

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    V. L. Bonch-Bruevich, Zh. Eksp. Teor. Fiz.,71, No. 4(10), 1583 (1976).

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    J. B. Keller and S. Antman (editors), Bifurcation Theory and Nonlinear Eigenvalue Problems, W. A. Benjamin (1969).

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    G. Z. Gershuni and E. M. Zhukhovitskii, Convection Stability of an Incompressible Fluid [in Russian], Nauka, Moscow (1972).

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    A. N. Temchin, Izv. Vyssh. Uchebn. Zaved., Fiz., No. 7, 42 (1978).

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    A. N. Kolmogorov and S. V. Fomin, Elements of the Theory of Functions and Functional Analysis, Graylock (1957).

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Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 8, pp. 12–17, August, 1978.

I am grateful to V. L. Bonch-Bruevich for formulating the problem, for the opportunity to become acquainted with the unpublished details in [1, 2], and for their constant attention.

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Temchin, A.I. The Benard phenomenon in a semiconductor. Influence of the external electric field. Soviet Physics Journal 21, 987–992 (1978). https://doi.org/10.1007/BF00892348

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Keywords

  • Temperature Distribution
  • Light Absorption
  • Electron Temperature
  • External Electric Field
  • Light Flux