An investigation was made into the nature of the excess currents in n-type gallium arsenide tunnel diodes and the influence of irradiation with 2.0-MeV electrons on the current-voltage characteristics of the diodes.
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 3, pp. 82–86, March, 1981.
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Vyatkin, A.P., Glushchenko, V.A., Parkhomenko, R.P. et al. Behavior of excess currents in n-type gallium arsenide tunnel diodes. Soviet Physics Journal 24, 275–278 (1981). https://doi.org/10.1007/BF00891607
- Gallium Arsenide
- Tunnel Diode
- Excess Current