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Behavior of excess currents in n-type gallium arsenide tunnel diodes


An investigation was made into the nature of the excess currents in n-type gallium arsenide tunnel diodes and the influence of irradiation with 2.0-MeV electrons on the current-voltage characteristics of the diodes.

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Literature cited

  1. 1.

    V. I. Sopryakov, Proc. Second Republican Physics Conference for Young Scientists, No. 2 [in Russian], Minsk (1972).

  2. 2.

    V. A. Glushchenko and A. P. Vyatkin, “Inventor's certificate No. 324943, July 10, 1969,” Ofitsial'nyi Byulleten' Gosudarstvennogo Komiteta SSSR po Delam Izobretenni i Otkrytii15 (1972).

  3. 3.

    C. Américo, Morato de Andrade, Solid State Electronics,9, 901 (1966).

  4. 4.

    A. Shibata, Jpn. J. Appl. Phys.,3, 711 (1964).

  5. 5.

    A. G. Chynoweth, W. L. Feldman, and R. A. Logan, Phys. Rev.,121, 684 (1961).

  6. 6.

    R. Swami and A. P. Tantry, Indian J. Pure Appl. Phys.,7, 556 (1969).

  7. 7.

    C. Constantinescu, E. Ivan, and A. Popescu, Rev. Roum. Phys.,14, 855 (1969).

  8. 8.

    B. I. Shklovskii and A. L. Efros, Electron Properties of Doped Semiconductors [in Russian], Nauka, Moscow (1979).

  9. 9.

    R. S. Classen, J. Appl. Phys.,32, 2372 (1961).

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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 3, pp. 82–86, March, 1981.

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Vyatkin, A.P., Glushchenko, V.A., Parkhomenko, R.P. et al. Behavior of excess currents in n-type gallium arsenide tunnel diodes. Soviet Physics Journal 24, 275–278 (1981).

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  • Gallium
  • Arsenide
  • Gallium Arsenide
  • Tunnel Diode
  • Excess Current