Advertisement

Springer Nature is making SARS-CoV-2 and COVID-19 research free. View research | View latest news | Sign up for updates

Behavior of excess currents in n-type gallium arsenide tunnel diodes

Abstract

An investigation was made into the nature of the excess currents in n-type gallium arsenide tunnel diodes and the influence of irradiation with 2.0-MeV electrons on the current-voltage characteristics of the diodes.

This is a preview of subscription content, log in to check access.

Literature cited

  1. 1.

    V. I. Sopryakov, Proc. Second Republican Physics Conference for Young Scientists, No. 2 [in Russian], Minsk (1972).

  2. 2.

    V. A. Glushchenko and A. P. Vyatkin, “Inventor's certificate No. 324943, July 10, 1969,” Ofitsial'nyi Byulleten' Gosudarstvennogo Komiteta SSSR po Delam Izobretenni i Otkrytii15 (1972).

  3. 3.

    C. Américo, Morato de Andrade, Solid State Electronics,9, 901 (1966).

  4. 4.

    A. Shibata, Jpn. J. Appl. Phys.,3, 711 (1964).

  5. 5.

    A. G. Chynoweth, W. L. Feldman, and R. A. Logan, Phys. Rev.,121, 684 (1961).

  6. 6.

    R. Swami and A. P. Tantry, Indian J. Pure Appl. Phys.,7, 556 (1969).

  7. 7.

    C. Constantinescu, E. Ivan, and A. Popescu, Rev. Roum. Phys.,14, 855 (1969).

  8. 8.

    B. I. Shklovskii and A. L. Efros, Electron Properties of Doped Semiconductors [in Russian], Nauka, Moscow (1979).

  9. 9.

    R. S. Classen, J. Appl. Phys.,32, 2372 (1961).

Download references

Author information

Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 3, pp. 82–86, March, 1981.

Rights and permissions

Reprints and Permissions

About this article

Cite this article

Vyatkin, A.P., Glushchenko, V.A., Parkhomenko, R.P. et al. Behavior of excess currents in n-type gallium arsenide tunnel diodes. Soviet Physics Journal 24, 275–278 (1981). https://doi.org/10.1007/BF00891607

Download citation

Keywords

  • Gallium
  • Arsenide
  • Gallium Arsenide
  • Tunnel Diode
  • Excess Current