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Effect of intrinsic lattice defects on excess currents of gallium arsenide tunnel diodes

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Gallium arsenide tunnel diodes were irradiated with electrons of energy E = 2.0 MeV at room temperature. Secondary hump structures were observed in the region of 0.45 V and 0.65–1.1 V forward bias. The variation in the excess currents of diodes subjected to electronic bombardment is described on the basis of models including three levels; EB + 0.25 eV, EB + 0.55 eV, and EC−0.5 eV. Annealing of radiation-induced defects is shown to take place in two stages at temperatures of 140–180°C and 200–240°C. “Switching” and “memory” effects are observed when the current-voltage characteristics (CVC) of tunnel diodes are measured at liquid-nitrogen temperatures in darkness.

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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 9, pp. 88–92, September, 1976.

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Alekseeva, Z.M., Brudnyi, V.N., Krivov, M.A. et al. Effect of intrinsic lattice defects on excess currents of gallium arsenide tunnel diodes. Soviet Physics Journal 19, 1174–1177 (1976). https://doi.org/10.1007/BF00891471

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  • Gallium
  • Lattice Defect
  • Arsenide
  • Gallium Arsenide
  • Forward Bias