Springer Nature is making SARS-CoV-2 and COVID-19 research free. View research | View latest news | Sign up for updates

Effect of intrinsic lattice defects on excess currents of gallium arsenide tunnel diodes

  • 13 Accesses

Abstract

Gallium arsenide tunnel diodes were irradiated with electrons of energy E = 2.0 MeV at room temperature. Secondary hump structures were observed in the region of 0.45 V and 0.65–1.1 V forward bias. The variation in the excess currents of diodes subjected to electronic bombardment is described on the basis of models including three levels; EB + 0.25 eV, EB + 0.55 eV, and EC−0.5 eV. Annealing of radiation-induced defects is shown to take place in two stages at temperatures of 140–180°C and 200–240°C. “Switching” and “memory” effects are observed when the current-voltage characteristics (CVC) of tunnel diodes are measured at liquid-nitrogen temperatures in darkness.

This is a preview of subscription content, log in to check access.

Literature cited

  1. 1.

    J. Holonyak, J. Appl. Phys.,11, 308 (1961).

  2. 2.

    R. S. Classen, J. Appl. Phys.,32, 2373 (1961).

  3. 3.

    S. B. Pierce, H. H. Sander, and A. D. Kantz, J. Appl. Phys.,33, 108 (1962).

  4. 4.

    V. N. Brudnyi, E. Yu. Brailovskii, M. A. Krivov, and V. P. Red'ko, Izv. Vyssh. Uchebn. Zaved., Fiz., No. 10, 118 (1974).

  5. 5.

    E. Yu. Brailovskii and I. D. Konozenko, Fiz. Tekh. Poluprovodn.,5, 641 (1971).

  6. 6.

    V. N. Brudnyi and M. A. Krivov, Izv. Vyssh. Uchebn. Zaved., Fiz., No. 6, 147 (1974).

  7. 7.

    N. P. Krivorotov, A. P. Vyakin, V. N. Brudnyi, and M. A. Krivov, Prib. Tekh. Eksp,6, 168 (1974).

Download references

Author information

Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 9, pp. 88–92, September, 1976.

Rights and permissions

Reprints and Permissions

About this article

Cite this article

Alekseeva, Z.M., Brudnyi, V.N., Krivov, M.A. et al. Effect of intrinsic lattice defects on excess currents of gallium arsenide tunnel diodes. Soviet Physics Journal 19, 1174–1177 (1976). https://doi.org/10.1007/BF00891471

Download citation

Keywords

  • Gallium
  • Lattice Defect
  • Arsenide
  • Gallium Arsenide
  • Forward Bias