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Damage dependent electrical activation of boron implanted silicon

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Abstract

The important role of damage dependent electrical activation in the case of boron implanted silicon layers is whown by comparing measured acceptor concentration profiles in differently amorphized silicon layers. It is shown that the amorphous layer is completely recrystallized after a 650° C anneal for 10 min and the implanted boron is electrically active. In the heavily damaged but not amorphous region underneath the amorphous layer the implanted boron is hardly electrically active after this temperature treatment. At higher annealing temperatures the electrical activity increases, but 900° C are required for complete activation of the implanted boron. These results indicate that the process to activate the implanted boron electrically is strongly damage dependent. We thus found a new contribution to the understanding of the annealing behavior of implanted layers.

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Ryssel, H., Müller, H. & Schmid, K. Damage dependent electrical activation of boron implanted silicon. Appl. Phys. 3, 321–324 (1974). https://doi.org/10.1007/BF00887282

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Index Headings

  • Ion implantation
  • Profiles
  • Damage