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Journal of Materials Science

, Volume 14, Issue 10, pp 2411–2421 | Cite as

Self-diffusion of14C in polycrystalline β-SiC

  • M. H. Hon
  • R. F. Davis
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Abstract

The14C self-diffusion coefficients for both lattice (D lc * ) and grain boundary (D bc * ) transport in high purity CVDβ-SiC are reported for the range 2128 to 2374 K. The Suzuoka analysis technique revealed thatD bc * is 105 to 106 faster thanD bc * ; the respective equations are given by
$$\begin{gathered} D_{I c}^* = (2.62 \pm 1.83) \times 10^8 exp\left\{ { - \frac{{(8.72 \pm 0.14)eV/atom}}{{kT}}} \right\}cm^2 sec^{ - 1} \hfill \\ D_{b c}^* = (4.44 \pm 2.03) \times 10^7 exp\left\{ { - \frac{{(5.84 \pm 0.09)eV/atom}}{{kT}}} \right\}cm^2 sec^{ - 1} \hfill \\ \end{gathered} $$

A vacancy mechanism is assumed to be operative for lattice transport. From the standpoint of crystallography and energetics, reasons are given in support of a path of transport which involves an initial jump to a vacant tetrahedral site succeeded by a jump to a normally occupied C vacancy.

Keywords

Boundary Diffusion Volume Diffusion Diffusion Profile Diffusion Anneal Diffusion Activation Energy 
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Copyright information

© Chapman and Hall Ltd. 1979

Authors and Affiliations

  • M. H. Hon
    • 1
  • R. F. Davis
    • 1
  1. 1.Department of Materials Engineering and Engineering Research Services DivisionNorth Carolina State UniversityRaleighUSA

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