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Optical study of localization in theab-plane conductivity of single crystals of YBa2Cu3O6.95 induced by ion damage

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Abstract

We studied the changes in the dc resistivity, Raman scattering, and IR conductivity of single crystals of YBa2Cu3O6.95 induced by damage from low-energy He+ ion bombardment. It appears thatT c , transport properties, and optical conductivity are strongly affected by modest irradiation doses whereas the chemical composition of the sample is not modified. Carrier localization is evidenced by the frequency dependence of the optical conductivity in the strongly damaged crystal and is used to explain the suppression of both the superfluid density andT c upon irradiation. The temperature dependence of the superfluid density is in agreement with the theoretical predictions for ad-wave superconductor. We also show that the intrinsic residual losses in the FIR are dramatically reduced in the disordered crystal.

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On leave from P. N. Lebedev Physics Institute, Russian Academy of Sciences, Moscow, Russia.

This work was supported by the Natural Sciences and Engineering Research Council of Canada and the Canadian Institute for Advanced Research. One of us (A.P.) is grateful to the Ontario Center for Materials Research for financial support.

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Basov, D.N., Puchkov, A.V., Hughes, R.A. et al. Optical study of localization in theab-plane conductivity of single crystals of YBa2Cu3O6.95 induced by ion damage. J Supercond 7, 497–499 (1994). https://doi.org/10.1007/BF00724598

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Key words

  • Optical conductivity
  • localization
  • radiation damage
  • d-wave superconductivity