Springer Nature is making SARS-CoV-2 and COVID-19 research free. View research | View latest news | Sign up for updates

Growth and misfit accommodation of β-SiC precipitates in silicon as implanted by oxygen

  • 14 Accesses

  • 4 Citations

This is a preview of subscription content, log in to check access.

References

  1. 1.

    K. ISUMI, M. DOKEN and H. ARIYOSHI,El. Lett. 14 (1978) 593.

  2. 2.

    P. L. F. HEMMENT, “Semiconductor-on-Insulators and Thin Film Transistor Technology”, edited by A. Chiang, M. W. Geis and L. Pfeiffer,Mat. Res. Soc. Proc. 53 (1985) 207.

  3. 3.

    J. STOEMENOS, C. JAUSSAUD, M. BRUEL and J. MARGAIL,J. Crystal Growth 73 (1985) 546.

  4. 4.

    J. STOEMENOS, “Ion Implantation in Semiconductors”, edited by D. Stievenard and J. C. Bourgoin (Trans Technology Publications, 1988) p. 115.

  5. 5.

    J. R. DAVIS, F. HOPPER, P. F. L. HEMMENT and K. J. REESON,IEEE Electron Device Trans. 34 (1987) 1713.

  6. 6.

    S. J. KRAUSE, C. O. JUNG and S. R. WILSON,Appl. Phys. Lett. 53 (1988) 63.

  7. 7.

    M. DUPUY,J. Microsc. Spectrosc. Electr. 9 (1984) 163.

  8. 8.

    I. H. WILSON, “Ion Beam Modification of Insulators”, edited by P. Mazzoldi and G. Arnold (Elsevier, 1987) Ch. 7.

  9. 9.

    N. MOTT and F. R. N. NABARRO,Proc. Phys. Soc. 52 (1940) 86.

  10. 10.

    M. F. ASHBY and L. JOHNSON,Phil. Mag. 20 (1969) 1009.

  11. 11.

    J. STOEMENOS and J. MARGAIL,Thin Solid Films 135 (1986) 115.

  12. 12.

    K. J. REESON, P. L. F. HEMMENT, J. STOEMENOS, J. DAVIS and G. E. CELLER,Appl. Phys. Lett. 51 (1987) 2242.

  13. 13.

    A. DE VEIRMAN, K. YALLUP, J. VAN LANDUYT, H. E. MAES and S. AMELINCKX,Inst. Phys. Conf. Ser. 87 (1987) 403.

  14. 14.

    G. D. WATKINS, ibid.23 (1975) 1.

  15. 15.

    U. GOSELLE,Mat. Res. Soc. 56 (1986) 419.

  16. 16.

    J. P. KALEJS, L. A. LADD and U. GOSELLE,Appl. Phys. Lett. 45 (1984) 268.

  17. 17.

    P. PIROUZ, C. M. CHOREY, T. T. CHENG and J. A. POWELL,Inst. Phys. Conf. Ser. 87 (1987) 175.

  18. 18.

    J. W. MATTHEWS, “Epitaxial Growth”, Part B, edited by J. W. Matthews (Academic Press, 1975) p. 559.

Download references

Author information

Rights and permissions

Reprints and Permissions

About this article

Cite this article

Antonopoulos, J.G., Stoemenos, J., Jaussaud, C. et al. Growth and misfit accommodation of β-SiC precipitates in silicon as implanted by oxygen. J Mater Sci Lett 8, 1374–1377 (1989). https://doi.org/10.1007/BF00720191

Download citation

Keywords

  • Oxygen
  • Polymer
  • Silicon
  • Misfit Accommodation