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Rapid thermal annealing of Ti Schottky contacts ton-GaAs

Abstract

Ti Schottky contacts were formed onn-GaAs surfaces and were subjected to rapid thermal annealing (RTA) at various temperatures. Low temperature RTA (<500 °C) results in a reduction in the diode leakage currents and increase in the barrier voltage. High temperature RTA (>500 °C) results in progressive degradation of the diode parameters. The improvement in diode parameters is expected to be due to better adhesion of Ti Schottky contact resulting in a more intimate contact of the Schottky metal to the GaAs substrate.

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Prasad, K., Faraone, L. & Nassibian, A.G. Rapid thermal annealing of Ti Schottky contacts ton-GaAs. J Mater Sci: Mater Electron 2, 227–229 (1991). https://doi.org/10.1007/BF00702927

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Keywords

  • GaAs
  • Electronic Material
  • Leakage Current
  • Thermal Annealing
  • Good Adhesion