Tin diffusions into AlAs-GaAs superlattices have been performed in sealed silica ampoules. The present experiments, for the first time, examine the effect of As on tin induced disordering. SIMS and shallow-angle bevel revealed that both the tin surface concentration and the width of the disordered region are increased when a higher arsenic pressure inside the ampoule is used. Such dependence on the arsenic pressure is explained by the diffusion via a negatively charged complex which may take the form of [VGaSnAsVGa]−. The disordering effect could be attributed to the diffusion of Ga vacancies associated with the migration of the complexes. However, a more likely explanation is the Fermi-Level effect which has been proposed to explain the enhancement of the interdiffusion in Si doped samples.
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Ho, H.P., Harrison, I., Baba-Ali, N. et al. The effect of arsenic pressure on the diffusion-induced disordering of tin in AlAs-GaAs superlattices. J Mater Sci: Mater Electron 2, 137–140 (1991). https://doi.org/10.1007/BF00696287
- Present Experiment
- Electronic Material
- Surface Concentration