Springer Nature is making SARS-CoV-2 and COVID-19 research free. View research | View latest news | Sign up for updates

The effect of arsenic pressure on the diffusion-induced disordering of tin in AlAs-GaAs superlattices

  • 26 Accesses

  • 2 Citations


Tin diffusions into AlAs-GaAs superlattices have been performed in sealed silica ampoules. The present experiments, for the first time, examine the effect of As on tin induced disordering. SIMS and shallow-angle bevel revealed that both the tin surface concentration and the width of the disordered region are increased when a higher arsenic pressure inside the ampoule is used. Such dependence on the arsenic pressure is explained by the diffusion via a negatively charged complex which may take the form of [VGaSnAsVGa]. The disordering effect could be attributed to the diffusion of Ga vacancies associated with the migration of the complexes. However, a more likely explanation is the Fermi-Level effect which has been proposed to explain the enhancement of the interdiffusion in Si doped samples.

This is a preview of subscription content, log in to check access.


  1. 1.

    W. D. LAIDIG, N. HOLONYAK, M. D. CAMRAS, K. HESS, J. J. COLEMAN, P. D. DAPKUS and J. BARDEEN,Appl. Phys. Lett. 38 (1981) 776.

  2. 2.

    M. KAWABE, N. SHIMIZU, F. HASEGAWA and Y. NANNICHI,Appl. Phys. Lett. 46 (1985) 849.

  3. 3.

    D. G. DEPPE and N. HOLONYAK,J. Appl. Phys. 64 (1988) R93.

  4. 4.

    L. J. VIELAND,J. Phys. Chem. Solids 21 (1961) 318.

  5. 5.

    M. B. PANISH,J. Appl. Phys. 44 (1973) 2659.

  6. 6.

    B. TUCK and M. H. BADAWI,J. Phys. D: Appl. Phys. 11 (1978) 2541.

  7. 7.

    N. ARNOLD, R. SCHMITT and K. HEIME,J. Phys. D: Appl. Phys. 17 (1984) 443.

  8. 8.

    D. SHAW,Physica Status Solidi (a)86 (1984) 629.

  9. 9.

    E. V. K. RAO, P. OSSART, F. ALEXANDRE and H. THIBIERGE,Appl. Phys. Lett. 50 (1987) 588.

  10. 10.

    T. Y. TAN and U. GOSELE,Appl. Phys. Lett. 52 (1988) 1240.

  11. 11.

    P. MEI, H. W. YOON, T. VENKATESAN, S. A. SCHWARZ and J. P. HARBISON,Appl. Phys. Lett. 50 (1987) 1823.

  12. 12.

    P. MEI, S. A. SCHWARZ, Y. VENKATESAN, S. A. SCHWARZ and E. COLAS,J. Appl. Phys. 65 (1989) 2165.

Download references

Author information

Rights and permissions

Reprints and Permissions

About this article

Cite this article

Ho, H.P., Harrison, I., Baba-Ali, N. et al. The effect of arsenic pressure on the diffusion-induced disordering of tin in AlAs-GaAs superlattices. J Mater Sci: Mater Electron 2, 137–140 (1991). https://doi.org/10.1007/BF00696287

Download citation


  • Migration
  • Arsenic
  • Present Experiment
  • Electronic Material
  • Surface Concentration