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The influence of3He on the wetting of4He to a cesiated substrate

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We report preliminary measurements of the influence of3He in the adsorption of4He to a cesiated substrate by the use of quartz crystal resonance techniques. When compared with the case of pure4He, the presence of3He in the apparatus induces the wetting of the mixture film to Cesium at low temperatures. The wetting is hysteretic, beginning at a concentration-dependent Tc on cooling with continued wetting for T>Tc on warming. The temperatures Tc are given as a function of the total concentration of3He in the apparatus.

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Ketola, K.S., Hallock, R.B. The influence of3He on the wetting of4He to a cesiated substrate. J Low Temp Phys 93, 935–944 (1993).

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PACS numbers

  • 67.70.+n