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Irradiation damage of A15-Nb3Si and Nb7Si

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Abstract

The behavior of the superconducting temperatureT c and the lattice parametera 0 of polycrystalline Nb3Si and Nb7Si thin films as a function of 300-kV α-particle fluence was investigated. It was found that theT c depression of A15 Nb3Si is of the same size and nature as for other A15 materials. In contrast, the initialT c degradation of Nb7Si is a factor of three larger. The observed minimum in theT c vs fluence dependence of Nb3Si is discussed and a simple qualitative model is presented.

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On leave of absence from the Institute of Physics, Czechoslovak Academy of Sciences, Prague, Czechoslovakia.

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Haase, E.L., Ruzcka, J. Irradiation damage of A15-Nb3Si and Nb7Si. J Low Temp Phys 47, 461–466 (1982). https://doi.org/10.1007/BF00683986

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Keywords

  • Thin Film
  • Depression
  • Magnetic Material
  • Irradiation Damage
  • Qualitative Model