Springer Nature is making SARS-CoV-2 and COVID-19 research free. View research | View latest news | Sign up for updates

Features of measurement of the oxygen concentration in silicon at a temperature of 15 K

  • 15 Accesses

This is a preview of subscription content, log in to check access.

Literature cited

  1. 1.

    Ya. Tarui (ed.), VLSI Technology, Springer-Verlag, New York (1986).

  2. 2.

    GOST Standard 19658.81, Silicon, Monocrystalline, in Ingots, Specifications [in Russian].

  3. 3.

    DIN 50438 Standard, Vol. 1, Bestimmung der Verunreinigungsgehalts in Silicium mittels Infrarot-Absorption. Sauerstoff.

  4. 4.

    ASTM Standard F 121-83, Standard Test Method for Interstitial Atomic Oxygen Content of Silicon by Infrared Absorption.

  5. 5.

    V. V. Voronkov and M. G. Mil'vidskii, Kristallografiya,33, No. 2, 471–477 (1988).

  6. 6.

    USSR Inventor's Certificate 1,505,084, “Method of obtaining silicon crystals,” IPC5 C 30 B 13/00, 29/06.

  7. 7.

    B. Pajot, Phys. Chem. Solids,28, 73–75 (1967).

  8. 8.

    B. Pajot and B. Deltour, Infrared Phys.,7, 195–198 (1967).

  9. 9.

    B. Pajot, Analysis,5, No. 7, 293–295 (1977).

  10. 10.

    B. A. Kolbesen, Appl. Phys. Lett.,27, No. 6, 353–355 (1975).

  11. 11.

    ASTM Standard F 120-88, Standard Practices for Determination of the Concentration of Impurities in Single Crystal Semiconductor Materials by Infrared Absorption Spectroscopy.

  12. 12.

    ASTM Standard F 1188-88, Test Method for Interstitial Atomic Oxygen Content of Silicon by Infrared Absorption.

Download references

Author information

Additional information

Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 57, Nos. 1–2, pp. 134–138, July–August, 1992.

Rights and permissions

Reprints and Permissions

About this article

Cite this article

Shklyar, B.L., Trubitsyn, Y.V. & Zasyad'vovk, A.M. Features of measurement of the oxygen concentration in silicon at a temperature of 15 K. J Appl Spectrosc 57, 636–639 (1992). https://doi.org/10.1007/BF00667661

Download citation

Keywords

  • Oxygen Concentration
  • ASTM Standard
  • Silicon Crystal
  • Polycrystalline Silicon
  • Differential Method