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Characteristics of growth and radiative recombination of epitaxial layers InAsxP1−x(0<x<0.05) grown by gas-phase epitaxy on InP substrates

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Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 52, No. 1, pp. 121–126, January, 1990.

We than V. A. Korol' for assistance in preparing the samples and P. V. Ananich for making the electron diffraction pictures.

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Bykovskii, V.A., Manego, S.A. & Osinskii, V.I. Characteristics of growth and radiative recombination of epitaxial layers InAsxP1−x(0<x<0.05) grown by gas-phase epitaxy on InP substrates. J Appl Spectrosc 52, 93–96 (1990). https://doi.org/10.1007/BF00664790

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Keywords

  • Analytical Chemistry
  • Recombination
  • Molecular Structure
  • Epitaxial Layer
  • Radiative Recombination