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Rapid thermal annealing of indium-implanted gallium arsenide

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References

  1. 1.

    V. V. Pasynkov and V. S. Sorokin, Materials in Electronic Engineering [in Russian], Moscow (1986).

  2. 2.

    R. P. Sharma, R. Bharda, L. E. Rehn, P. M. Baldo, and M. Grimaditch, J. Appl. Phys.,66, 152–154 (1989).

  3. 3.

    G. Burns, F. N. Dacol, C. R. Wie, E. Burstein, and M. Cardona, Sol. State Commun.,62, 449–454 (1987).

  4. 4.

    R. N. Zitter, in: The Physics of Semimetals and Narrow Gap Semiconductors, ed. by D. L. Garter and R. T. Bate. New York (1971).

  5. 5.

    R. L. Farrow, R. C. Chang, S. Mroczkowski, and F. H. Pollak, Appl. Phys. Lett.,31, 768–770 (1977).

  6. 6.

    R. K. Soni, J. Cryst. Growth,94, 347–350 (1989).

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Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 59, Nos. 1–2, pp. 96–100, July–August, 1993.

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Akimov, A.N., Vlasukova, L.A., Komarov, F.F. et al. Rapid thermal annealing of indium-implanted gallium arsenide. J Appl Spectrosc 59, 533–536 (1993). https://doi.org/10.1007/BF00663365

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Keywords

  • GaAs
  • Raman Spectrum
  • Rapid Thermal Annealing
  • Gallium Arsenide
  • Ternary Solution