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Dynamics of the change in the reflection coefficient in nanosecond laser annealing of implanted silicon

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Additional information

Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 50, No. 4, pp. 589–595, April, 1989.

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Zhvavyi, S.P. Dynamics of the change in the reflection coefficient in nanosecond laser annealing of implanted silicon. J Appl Spectrosc 50, 377–382 (1989). https://doi.org/10.1007/BF00659479

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Keywords

  • Silicon
  • Reflection
  • Analytical Chemistry
  • Molecular Structure
  • Reflection Coefficient