Advertisement

Journal of Materials Science

, Volume 28, Issue 7, pp 1829–1833 | Cite as

Low-temperature plasma coating of electroluminescence particles with silicon nitride film

  • S. Yan
  • H. Maeda
  • J. -I. Hayashi
  • K. Kusakabe
  • S. Morooka
  • T. Okubo
Papers

Abstract

A Si3N4 thin film was deposited on ZnS phosphor particles of 18μm diameter in a silane-nitrogen radio-frequency (r.f.) plasma at 310–330 K. The particles were frequently shaken to maintain contact with plasma gas. The film deposited was characterized by X-ray photoelectron spectroscopy XPS, Fourier-transformed infrared spectroscopy and high-resolution scanning electron microscopy (SEM). The Si/N ratio of the film was about 1.25, and little change in the infrared spectrum was observed following the exposure in the ambient air for 10 days. The performance of the film as a diffusion barrier was evaluated by monitoring the lifetime of electroluminescence (EL). A film as thin as 50–60 nm could cover the EL powder without pinholes, and successfully protected the phosphor from water vapour.

Keywords

Water Vapour Nitride Infrared Spectroscopy Infrared Spectrum Silicon Nitride 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 1.
    S. Morooka, T. Okubo andK. Kusakabe,Powder Technol. 63 (1990) 105.CrossRefGoogle Scholar
  2. 2.
    A. Kobata, T. Okubo, K. Kusakabe andS. Morooka,Kagaku Kogaku Ronbunshu 16 (1990) 543.CrossRefGoogle Scholar
  3. 3.
    Y. Toda andA. Kato,Ceram. Int. 15 (1986) 161.CrossRefGoogle Scholar
  4. 4.
    K. Yasui, K. Komaki andS. Kaneda,J. Non-Cryst. Solids 127 (1991) 1.CrossRefGoogle Scholar
  5. 5.
    M. Shimozuma, H. Tagashira andH. Hasegawa,Nippon Kagaku Kaishi 10 (1984) 1582.CrossRefGoogle Scholar
  6. 6.
    H. Dun, P. Pan, F. R. White andR. W. Douse,J. Electrochem. Soc. 128 (1981) 1555.CrossRefGoogle Scholar
  7. 7.
    H. F. Ivey, in “Electroluminescence and Related Effects” (Academic Press, New York, 1963) p. 68.Google Scholar
  8. 8.
    K. Hirabayashi, H. Kozawaguchi andB. Tsujiyama,J. Electrochem. Soc. 130 (1983) 2259.CrossRefGoogle Scholar
  9. 9.
    S. Faria,ibid. 135 (1988) 2627.CrossRefGoogle Scholar
  10. 10.
    J. Nakamura andT. Hirate, Report CPM87-31, Institute of Electronics, Information and Communication Engineers, Japan (1987).Google Scholar
  11. 11.
    J. L. Jauberteau, D. Conte, M. I. Baraton, P. Quintard, J. Aubreton andA. Catherinot,Plasma Chem. Plasma Process 10 (1990) 401.CrossRefGoogle Scholar
  12. 12.
    C. Blaauw,J. Electrochem. Soc. 131 (1984) 1114.CrossRefGoogle Scholar
  13. 13.
    J. N. Chiang andD. W. Hess,ibid. 137 (1990) 2222.CrossRefGoogle Scholar

Copyright information

© Chapman & Hall 1993

Authors and Affiliations

  • S. Yan
    • 1
  • H. Maeda
    • 1
  • J. -I. Hayashi
    • 1
  • K. Kusakabe
    • 1
  • S. Morooka
    • 1
  • T. Okubo
    • 2
  1. 1.Department of Chemical Science and TechnologyKyushu UniversityFukuokaJapan
  2. 2.Engineering Research InstituteThe University of TokyoTokyoJapan

Personalised recommendations