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Journal of Materials Science

, Volume 27, Issue 23, pp 6324–6330 | Cite as

Microstructures of diamond films deposited on (100) silicon wafer by microwave plasma-enhanced chemical vapour deposition

  • Jung Ho Je
  • G. Y. Lee
Papers

Abstract

Diamond films were deposited on (1 0 0) silicon wafer by microwave plasma-enhanced chemical vapour deposition. The microstructural changes of the diamond films were studied in relation to the pre-treatment of the silicon substrate, the methane concentration and the substrate temperature. The ultrasonic method for the pre-treatment of the silicon substrate increased the nucleation density, resulting in the deposition of small diamond particles. The surface morphology changed from the close-packed (1 1 1) to the (1 0 0) plane with increase in the methane concentration due to the decreased adatom mobility. The morphology also changed from (1 1 1) to (1 0 0) planes with substrate temperature, due to the effect of the increased chemical species. The change in the crystallinity with deposition time was also investigated.

Keywords

Polymer Silicon Microstructure Microwave Surface Morphology 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Chapman & Hall 1992

Authors and Affiliations

  • Jung Ho Je
    • 1
  • G. Y. Lee
    • 1
  1. 1.Department of Materials Science and EngineeringPohang Institute of Science and TechnologyPohang, KyungbukKorea

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