Journal of Materials Science

, Volume 28, Issue 19, pp 5123–5132 | Cite as

Quantitative determination of the stability of SiC whisker in reaction-bonded/hot-pressed Si3N4 composites by X-ray diffraction

  • S. T. J. Chen
  • J. -M. Yang


A method was developed for the quantitative determination of weight fractions of the phases in SiC whisker-reinforced reaction-bonded Si3N4 composites using X-ray diffraction. Composites with different amounts of sintering additives and whiskers were fabricated using reaction bonding followed by hot pressing. The amount of whiskers remaining in each composite after each processing stage was determined. In order to study the degradation mechanism, the microstructural development after each processing step was examined using scanning and transmission electron microscopy. Finally, the effect of sintering additives on the microstructural development and whisker stability was also investigated.


Polymer Microscopy Electron Microscopy Transmission Electron Microscopy Processing Step 
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Copyright information

© Chapman & Hall 1993

Authors and Affiliations

  • S. T. J. Chen
    • 1
  • J. -M. Yang
    • 1
  1. 1.Department of Materials Science and EngineeringUniversity of CaliforniaLos AngelesUSA

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