Journal of Materials Science

, Volume 26, Issue 18, pp 4924–4930 | Cite as

Crystallization kinetics in glassy Ge20Se80−xInx alloys

  • P. Agarwal
  • S. Goel
  • S. K. Tripathi
  • A. Kumar


Crystallization kinetics is studied in glassy Ge20Se80−xInx (0 ≤ x ≤ 20) using isothermal annealing at temperatures between the glass transition and melting. D.c. conductivity is taken as a parameter to estimate the extent of crystallization (α). The activation energy of crystallization (ΔE) and the order parameter (n) are calculated by fitting the values of α in the Avrami equations of isothermal crystallization. The results indicate that ΔE is highly composition-dependent, which is explained in terms of the stable phases in the Ge-Se-In system.


Polymer Crystallization Activation Energy Glass Transition Stable Phasis 
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Copyright information

© Chapman & Hall 1991

Authors and Affiliations

  • P. Agarwal
    • 1
  • S. Goel
    • 1
  • S. K. Tripathi
    • 1
  • A. Kumar
    • 1
  1. 1.Department of PhysicsHarcourt Butler Technological InstituteKanpurIndia

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