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Journal of Materials Science

, Volume 26, Issue 8, pp 2007–2014 | Cite as

Electrical properties of thin oxidized aluminium films

  • F. M. Reicha
  • M. A. El Hiti
  • P. B. Barna
Papers

Abstract

Thin aluminium films of thickness 40 to 200 nm were deposited on to glass substrates at 573 K in a high vacuum. The deposition was carried out layer by layer and the interfaces between these layers were exposed to oxygen. The electrical resistivity was studied as a function of the film thickness, annealing time, annealing temperature and oxygen pressure. The temperature coefficient of resistivity and the activation energy for the conduction electrons were studied as a function of the film thickness and oxygen pressure. Fuchs-Sondheimer theory for electrical conduction was applied to the experimental results. The mean free path of the conduction electrons was calculated as a function of temperature and agreed well with the theoretical relation.

Keywords

Oxygen Polymer Aluminium Activation Energy Electrical Conduction 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Chapman and Hall Ltd. 1991

Authors and Affiliations

  • F. M. Reicha
    • 1
  • M. A. El Hiti
    • 2
  • P. B. Barna
    • 3
  1. 1.Department of Physics, Faculty of ScienceMansura UniversityMansuraEgypt
  2. 2.Department of Physics, Faculty of ScienceTanta UniversityTantaEgypt
  3. 3.Research Institute for Technical Physics HASBudapestHungary

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