Journal of Materials Science

, Volume 27, Issue 14, pp 3883–3888 | Cite as

Growth characteristics of β-SiC by chemical vapour deposition

  • Chun-Hsun Chu
  • Yung-Ming Lu
  • Min-Hsiung Hon


A twin-plane re-entrant corner effect (TPRE) in growth of chemical vapour deposited (CVD) β-SiC is described by the film and particles of gas-phase homogeneous nucleation. The structural morphology has been characterized by scanning electron microscopy and transmission electron microscopy. Morphological characteristics of the deposited crystals, such as triangularity, hexagons or facets have been explained in terms of the re-entrant corner effect at twin junctions, which were proposed as preferential growth sites for perfect crystals. For real deposits, screw dislocations and/or the re-entrant corner effect are not expected to be compatible. The majority of chemical vapour deposited SiC crystals have a high defect density comprised of {111} twins and dislocations associated with the process variables. Infrared transmission spectra and electron spectroscopy of chemical analysis indicated that the major chemical bonds of CVD β-SiC were Si-C and C-H bonds. The positions of the 1s or 2p corelevel peaks for deposits are described.


Transmission Electron Microscopy Chemical Vapour Deposit Chemical Vapour Process Variable Transmission Spectrum 
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Copyright information

© Chapman & Hall 1992

Authors and Affiliations

  • Chun-Hsun Chu
    • 1
  • Yung-Ming Lu
    • 1
  • Min-Hsiung Hon
    • 1
  1. 1.Department of Materials EngineeringNational Cheng Kung UniversityTainanTaiwan

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