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Journal of Materials Science

, Volume 27, Issue 14, pp 3743–3748 | Cite as

Effect of additive-oxide amount on sintering of Si3N4 with Y2O3 and Nd2O3

  • Naoto Hirosaki
  • Akira Okada
Papers

Abstract

The effect of additive amount on the gas-pressure sintering of silicon nitride is investigated. Silicon nitride containing 0.5 to 10 mol % (SN10) of equimolar Y2O3-Nd2O3 is fired at 1600 to 1900 °C for 4 h in 10 M Pa N2 gas. A small amount of oxide (1 mol %; SN1) is effective for densification as well as a larger amount of oxide (6–10 mol %) when fired at 1900 °C. Composition analysis of sintered specimens indicates that SN1 densifies through a small amount of SiO2-rich liquid-phase, whereas SN10 densifies by way of a large amount of additive-oxide-rich liquid phase.

Keywords

Oxide Polymer Silicon Liquid Phase Nitride 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Chapman & Hall 1992

Authors and Affiliations

  • Naoto Hirosaki
    • 1
  • Akira Okada
    • 1
  1. 1.Central Engineering LaboratoriesNissan Motor Co. LtdYokosukaJapan

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