Oxidation kinetics of silicon carbide whiskers studied by X-ray photoelectron spectroscopy
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Silicon carbide whisker surfaces were characterized by X-ray photoelectron spectroscopy (XPS) to determine changes in the surface oxide film which occurred as a result of heating in air at temperatures from 600 to 800 °C. Equations were derived for the calculation of surface oxide film thickness from the SiC to SiO2 2p intensity ratios. Oxidation was found to follow a linear rate law in this temperature range for the first 10 nm of oxide growth. An activation energy of 17.2 ± 2.8 kcal mol−1 (72 ± 12 kJ mol−1) was measured.
KeywordsOxide Polymer Silicon SiO2 Carbide
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