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Journal of Materials Science

, Volume 26, Issue 6, pp 1655–1658 | Cite as

Oxidation kinetics of silicon carbide whiskers studied by X-ray photoelectron spectroscopy

  • Pu Sen Wang
  • S. M. Hsu
  • T. N. Wittberg
Papers

Abstract

Silicon carbide whisker surfaces were characterized by X-ray photoelectron spectroscopy (XPS) to determine changes in the surface oxide film which occurred as a result of heating in air at temperatures from 600 to 800 °C. Equations were derived for the calculation of surface oxide film thickness from the SiC to SiO2 2p intensity ratios. Oxidation was found to follow a linear rate law in this temperature range for the first 10 nm of oxide growth. An activation energy of 17.2 ± 2.8 kcal mol−1 (72 ± 12 kJ mol−1) was measured.

Keywords

Oxide Polymer Silicon SiO2 Carbide 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Chapman and Hall Ltd. 1991

Authors and Affiliations

  • Pu Sen Wang
    • 1
  • S. M. Hsu
    • 1
  • T. N. Wittberg
    • 2
  1. 1.Ceramics DivisionNational Institute of Standards and TechnologyGaithersburgUSA
  2. 2.University of Dayton Research InstituteDaytonUSA

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