Journal of Materials Science

, Volume 26, Issue 6, pp 1655–1658 | Cite as

Oxidation kinetics of silicon carbide whiskers studied by X-ray photoelectron spectroscopy

  • Pu Sen Wang
  • S. M. Hsu
  • T. N. Wittberg


Silicon carbide whisker surfaces were characterized by X-ray photoelectron spectroscopy (XPS) to determine changes in the surface oxide film which occurred as a result of heating in air at temperatures from 600 to 800 °C. Equations were derived for the calculation of surface oxide film thickness from the SiC to SiO2 2p intensity ratios. Oxidation was found to follow a linear rate law in this temperature range for the first 10 nm of oxide growth. An activation energy of 17.2 ± 2.8 kcal mol−1 (72 ± 12 kJ mol−1) was measured.


Oxide Polymer Silicon SiO2 Carbide 
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  1. 1.
    M. N. Rahaman, Y. Boiteux and L. C. De Jonghe, Amer. Ceram. Soc. Bull. 65 (1986) 1171.Google Scholar
  2. 2.
    R. F. Adamsky, J. Phys. Chem. 63 (1959) 305.CrossRefGoogle Scholar
  3. 3.
    R. C. A. Harris, J. Amer. Ceram. Soc. 58 (1975) 7.CrossRefGoogle Scholar
  4. 4.
    T. Muelhoff, M. J. Bozack, W. J. Choyke and J. T. Yates, J. Appl. Phys. 60 (1986) 2558.CrossRefGoogle Scholar
  5. 5.
    J. A. Costello and R. E. Tressler, J. Amer. Ceram. Soc. 69 (1986) 674.CrossRefGoogle Scholar
  6. 6.
    T. N. Taylor, J. Mater. Res. 4 (1989) 189.CrossRefGoogle Scholar
  7. 7.
    S. C. Singhal, J. Amer. Ceram. Soc. 59 (1976) 81.CrossRefGoogle Scholar
  8. 8.
    W. H. Press, B. P. Flannery, S. A. Teukolsky and W. T. Vetterling, “Numerical Recipes” (Cambridge University Press, New York, 1987) pp. 400, 407–20, 523–8.Google Scholar
  9. 9.
    T. A. Carlson and G. E. McGuire, J. Electron Spectr. 1 (1972) 161.CrossRefGoogle Scholar
  10. 10.
    C. J. Powell, J. Vac. Sci. Technol. A3 (1985) 1338.CrossRefGoogle Scholar
  11. 11.
    A. C. Suzuki, H. Ashida, N. Furui, K. Mameno and H. Matsunami, Jap. J. Appl. Phys. 21 (1982) 579.CrossRefGoogle Scholar

Copyright information

© Chapman and Hall Ltd. 1991

Authors and Affiliations

  • Pu Sen Wang
    • 1
  • S. M. Hsu
    • 1
  • T. N. Wittberg
    • 2
  1. 1.Ceramics DivisionNational Institute of Standards and TechnologyGaithersburgUSA
  2. 2.University of Dayton Research InstituteDaytonUSA

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