Growth and optical properties of ZnIn2Se4 films
- 60 Downloads
Thin films of ZnIn2Se4 were deposited on quartz substrates at 297 K by the conventional thermal evaporation technique. The as-deposited films were amorphous. On annealing at 623 K under vacuum for 3 h, the films crystallized with a preferred (1 1 2) orientation corresponding to the chalcopyrite-type structure. Films deposited on a quartz substrate heated to 573 K were also crystalline. The optical constants were computed from the measured transmittance and reflectance at normal incidence of light in the wavelength range 400 to 2000 nm. The analysis of the data gave a direct gap of 2.2 and 2.06 eV for the amorphous and crystallized films, respectively. The dispersion curve exhibited a peak above the absorption edge. An indirect gap of 1.8 eV for the crystallized films and a direct forbidden gap of 1.75 eV for the amorphous films were also deduced. A direct allowed transition with a gap of 2.065 eV and an indirect transition with a gap of 1.69 eV were deduced for the crystalline films deposited on the heated substrate.
KeywordsAbsorption Edge Dispersion Curve Normal Incidence Optical Constant Thermal Evaporation
Unable to display preview. Download preview PDF.
- 2.N. A. Goryunova, V. I. Kotovich and V. A. Frankkamenetskii, Dokl. Akad. Nauk SSSR 103 (1955) 659.Google Scholar
- 7.J. Filipowicz, Tagungsbericht des Kolloquiums 4 des Berg -und Hüttenmännischen Tages, Frieberg, July 1977, p. 204.Google Scholar
- 12.O. S. Heavens, “Optical Properties of Thin Solid Films” (Dover, New York, 1965) p. 55.Google Scholar
- 13.J. L. Pankove, “Optical Processes in Semiconductors” (Prentice-Hall, New York, 1971).Google Scholar