Journal of Materials Science

, Volume 26, Issue 6, pp 1505–1511 | Cite as

Friction and wear of single-crystal silicon at elevated temperatures

  • D. -S. Park
  • S. Danyluk
  • M. J. McNallan


Single-crystal silicon wafers ((1 1 1) and (1 0 0)p-type) were abraded at room temperature 300 °C, and 600 °C by a polycrystalline partially stabilized zirconia ball in a ball-on reciprocating flat geometry. The sliding direction was 〈1 1 0〉. The friction coefficient was recorded as a function of reciprocating strokes and the deformation mode of the silicon. The friction coefficient at room temperature decreased with the number of strokes, and this variation was less affected by the number of strokes at the higher temperatures. The wear track width and depth were measured at the three temperatures. Wear increases as the temperature is raised to 300 and 600 °C. Optical and scanning electron microscopy of the subsurface damage reveals that cracks are generated at RT and 300 °C and dislocations are produced at 600 °C. The change in deformation mode with temperature from brittle fracture to plastic deformation accounts for the differences in wear.


Polymer Silicon Scanning Electron Microscopy Zirconia Brittle 
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Copyright information

© Chapman and Hall Ltd. 1991

Authors and Affiliations

  • D. -S. Park
    • 1
  • S. Danyluk
    • 1
  • M. J. McNallan
    • 1
  1. 1.Department of Civil Engineering, Mechanics and MetallurgyUniversity of Illinois at ChicagoChicagoUSA

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