Journal of Materials Science

, Volume 27, Issue 20, pp 5536–5538 | Cite as

Thermoluminescence study of semiconductor materials SixTe60−x As30Ge10

  • A. F. Maged
  • Y. M. Amin
  • S. A. Durrani


The effect of gamma irradiation on SixTe60−xAs30Ge10, where x= 5, 12 and 20, has been studied using thermoluminescence (TL). As expected in semiconductor materials, both x=5 and 20 chalcogenides showed a wide TL peak ranging from ∼80–300 °C. However, these two materials also exhibited a sharp peak at ∼360 and ∼380 °C for x = 5 and 20, respectively. On the other hand, the material with x=12 showed very little response to gamma radiation, but if the sample was exposed to ultraviolet light (after being glowed of any TL up to 500°C) and then glowed (called phototransfer-thermoluminescence), several peaks appeared at ∼80, 180, 300, and 350°C. The x= 5 and 20 samples did not show any response to ultraviolet light. Because the TL response depended on the ratio of Te/Si, it can be concluded that the TL technique can also be used to characterize semiconductor materials, and it would complement other techniques such as electrical conductivity and differential thermal analysis.


Radiation Polymer Electrical Conductivity Thermal Analysis Differential Thermal Analysis 
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Copyright information

© Chapman & Hall 1992

Authors and Affiliations

  • A. F. Maged
    • 1
  • Y. M. Amin
    • 1
  • S. A. Durrani
    • 1
  1. 1.School of Physics and Space ResearchUniversity of BirminghamBirminghamUK

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