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Journal of Materials Science

, Volume 27, Issue 20, pp 5531–5535 | Cite as

Growth and characterization of Al2O3 insulator gate on p-InP and p-Si by metallorganic chemical vapour deposition at low temperatures

  • T. W. Kim
  • H. Lim
  • Y. D. Zheng
  • A. A. Reeder
  • B. D. Mccombe
Papers

Abstract

Metallorganic chemical vapour deposition of Al2O3 from Al(O-C3H7)3 via pyrolysis at low (∼280 °C) temperature was investigated with the goal of producing high quality Al2O3/p-InP (1 0 0) and Al2O3/p-Si (1 0 0) interfaces. Ellipsometer measurements of Al2O3 have determined the refractive index of the film to be about 1.55. Room temperature capacitance-voltage measurements were used to characterize the electrical properties of the structures after metal gate electrodes have been deposited. Low temperature conductance-voltage measurements were also carried out to investigate the quality of the Al2O3/InP interfaces. The interface state densities Al2O3/p-InP and Al2O3/p-Si determined from deep-level transient spectroscopy were approximately 1012 eV−1 cm−2 and 1011 eV−1 cm−2.

Keywords

Polymer Spectroscopy Al2O3 Refractive Index Pyrolysis 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Chapman & Hall 1992

Authors and Affiliations

  • T. W. Kim
    • 1
  • H. Lim
    • 2
  • Y. D. Zheng
    • 3
  • A. A. Reeder
    • 3
  • B. D. Mccombe
    • 3
  1. 1.Department of PhysicsKwangwoon UniversityNowon-Ku, SeoulKorea
  2. 2.Department of Electronics EngineeringAjou UniversitySuwonKorea
  3. 3.Department of Physics and AstronomyState University of New York at BuffaloUSA

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