Journal of Materials Science

, Volume 27, Issue 20, pp 5531–5535 | Cite as

Growth and characterization of Al2O3 insulator gate on p-InP and p-Si by metallorganic chemical vapour deposition at low temperatures

  • T. W. Kim
  • H. Lim
  • Y. D. Zheng
  • A. A. Reeder
  • B. D. Mccombe


Metallorganic chemical vapour deposition of Al2O3 from Al(O-C3H7)3 via pyrolysis at low (∼280 °C) temperature was investigated with the goal of producing high quality Al2O3/p-InP (1 0 0) and Al2O3/p-Si (1 0 0) interfaces. Ellipsometer measurements of Al2O3 have determined the refractive index of the film to be about 1.55. Room temperature capacitance-voltage measurements were used to characterize the electrical properties of the structures after metal gate electrodes have been deposited. Low temperature conductance-voltage measurements were also carried out to investigate the quality of the Al2O3/InP interfaces. The interface state densities Al2O3/p-InP and Al2O3/p-Si determined from deep-level transient spectroscopy were approximately 1012 eV−1 cm−2 and 1011 eV−1 cm−2.


Polymer Spectroscopy Al2O3 Refractive Index Pyrolysis 
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  1. 1.
    C. W. Wilmsen, “Physics and Chemistry of III–V Compound Semiconductor Interfaces”, (Plenum Press, New York, 1985).CrossRefGoogle Scholar
  2. 2.
    N. Suzuki, T. Hariu and Y. Shibata, Appl. Phys. Lett. 33 (1978) 761.CrossRefGoogle Scholar
  3. 3.
    L. Messick, Solid State Elec. 23 (1980) 551.CrossRefGoogle Scholar
  4. 4.
    L. J. Messick, IEEE Trans. Electron Devices 28 (1981) 218.CrossRefGoogle Scholar
  5. 5.
    T. Kawakami and M. Okamura, Electron. Lett. 15 (1979) 502.CrossRefGoogle Scholar
  6. 6.
    P. V. Staa, H. Rombach and R. Kassing, J. Appl. Phys. 54 (1983) 4014.CrossRefGoogle Scholar
  7. 7.
    L. Messick, ibid. 47 (1976) 4949.CrossRefGoogle Scholar
  8. 8.
    L. G. Meiners, D. L. Lile and D. A. Collins, J. Vac. Sci. Technol. 16 (1979) 1458.CrossRefGoogle Scholar
  9. 9.
    D. Fritzsche, Electron. Lett. 14 (1978) 51.CrossRefGoogle Scholar
  10. 10.
    L. G. Meiners, J. Vac. Sci. Technol. 19 (1981) 373.CrossRefGoogle Scholar
  11. 11.
    J. Woodward, D. C. Cameron, L. D. Irving and G. R. Jones, Thin Solid Films 85 (1981) 61.CrossRefGoogle Scholar
  12. 12.
    R. F. C. Farrow, J. Phys. D 7 (1974) 2435.CrossRefGoogle Scholar
  13. 13.
    P. N. Farennec, M. Le Contellec, H. L. Haridon, G. P. Pelous and J. Richard, Appl. Phys. Lett. 34 (1979) 807.CrossRefGoogle Scholar
  14. 14.
    K. P. Pande, V. K. R. Nair and D. Gutierrez, J. Appl. Phys. 53 (1983) 5436.CrossRefGoogle Scholar
  15. 15.
    T. Ando, A. B. Fowler and F. Stern, Rev. Mod. Phys. 54 (1982) 437.CrossRefGoogle Scholar
  16. 16.
    M. Ishida, I. Katakabe, T. Nakamura and N. Ohtake, Appl. Phys. Lett. 52 (1988) 1326.CrossRefGoogle Scholar
  17. 17.
    K. Sawada, M. Ishida, T. Nakamura and N. Ohtake, ibid. 52 (1988) 1673.CrossRefGoogle Scholar
  18. 18.
    K. Char, D. K. Fork, T. H. Geballe, S. S. Laderman, R. C. Taber, R. D. Jacowitz, F. Bridges, G. A. N. Connell and J. B. Boyce, ibid. 56 (1990) 785.CrossRefGoogle Scholar
  19. 19.
    M. Okamura and T. Kobayashi, Jpn. J. Appl Phys. 19 (1980) 2151.CrossRefGoogle Scholar
  20. 20.
    A. G. Milnes and D. L. Feucht, “Heterojunctions and Metal-Semiconductor Junctions”, (Academic Press, New York, 1972)Google Scholar
  21. 21.
    P. Bogdanski, F. Murry and J. P. Piel, Solid State Commun. 64 (1987) 411.CrossRefGoogle Scholar
  22. 22.
    S. M. Sze, “Physics of Semiconductor Devices,” 2nd Edn (John Wiley, New York, 1981)Google Scholar
  23. 23.
    V. Dolgopolov, C. Mazure, A. Zrenner and F. Koch, J. Appl. Phys. 55 (1984) 4280.CrossRefGoogle Scholar

Copyright information

© Chapman & Hall 1992

Authors and Affiliations

  • T. W. Kim
    • 1
  • H. Lim
    • 2
  • Y. D. Zheng
    • 3
  • A. A. Reeder
    • 3
  • B. D. Mccombe
    • 3
  1. 1.Department of PhysicsKwangwoon UniversityNowon-Ku, SeoulKorea
  2. 2.Department of Electronics EngineeringAjou UniversitySuwonKorea
  3. 3.Department of Physics and AstronomyState University of New York at BuffaloUSA

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