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Journal of Materials Science

, Volume 27, Issue 10, pp 2670–2676 | Cite as

Binder chemistry, adhesion and structure of interfaces in thick-film metallized aluminium nitride substrates

  • C. E. Newberg
  • S. H. Risbud
Papers

Abstract

Aluminium nitride substrates from three different sources were metallized by standard thick film processing using gold conductor pastes, Pd-Ag paste, and a ruthenium oxide resistor paste. Screen printed pastes were fired in a typical three-zone furnace to obtain metallized AIN substrates. Interfacial reaction zones were studied by microscopic (optical and scanning electron microscopy) and electron beam microprobe analysis techniques. The elements in the binder materials in thick film pastes form amorphous phases at the interface which influence the adhesion of thick films to the AIN substrate. The lack of certain elements (Cd, Zn, Ca) in the binder of the gold thick-film paste led to weaker adhesion and severe degradation of the thick-film adhesion during thermal cycling.

Keywords

Ruthenium Thick Film Metallized Aluminium Ruthenium Oxide Weak Adhesion 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. 1.
    R. R. Tummala and E. J. Rymaszewski, Microelectronics Packaging Handbook (Van Nostrand-Reinhold, 1989) pp. 492–510.Google Scholar
  2. 2.
    N. Kuramoto, H. Taniguchi and I. Aso, Amer. Ceram. Soc. Bull. 68 (1989) 883.Google Scholar
  3. 3.
    L. M. Sheppard, ibid. 69 (1990) 1801.Google Scholar
  4. 4.
    N. Iwase, A. Tsuge and Y. Sugiura, Int. J. Hybrid Microelectron. 7 (1984) 49.Google Scholar
  5. 5.
    K. Komeya, A. Tsuge, H. Inque and H. Otha, Yogyo-Kyokai-Shi 89 (1981) 58.Google Scholar
  6. 6.
    K. Shinozaki, K. Anzai, T. Takano, A. Tsuge and K. Komeya, in Proceedings of the 22nd Symposium on Basic Science of Ceramics, Yogyo-Kyokai, January 1984, p. 43.Google Scholar
  7. 7.
    L. Maya, Adv. Ceram. Mater. 1 (1986) 150.CrossRefGoogle Scholar
  8. 8.
    E. K. Beauchamp, M. J. Carr and R. H. Graham, ibid. 2 (1987) 79.CrossRefGoogle Scholar
  9. 9.
    Y. Kurokawa, K. Utsumi and H. Takamizawa, J. Amer. Ceram. Soc. 71 (1988) 588.CrossRefGoogle Scholar
  10. 10.
    N. Iwase, K. Anzai, K. Shinozaki, O. Hirao, T. D. Thanh and Y. Sugiura, IEEE Trans. CHMT 8 (1985) 253.Google Scholar
  11. 11.
    N. Iwase, K. Anzai and K. Shinozaki, Solid State Tech. 29 (1986) 135.Google Scholar
  12. 12.
    W. Werdecker and F. Aldinger, in Proceedings of the ECC, May 1984, pp. 402–6.Google Scholar
  13. 13.
    W. Werdecker and F. Aldinger, in Proceedings of the 35th Electronic Components Conference, 1985, p. 26.Google Scholar
  14. 14.
    S. G. Konsowski, J. A. Olenick and R. D. Hall, in Proceedings of the International Symposium on Microelectronics, November 1985, p. 213.Google Scholar
  15. 15.
    A. A. Mohammed and S. J. Corbett, ibid. p. 218.Google Scholar
  16. 16.
    N. Kuramoto, H. Taniguchi and I. Aso, IEEE Trans. Components, Hybrids, Manuf. Tech. (1986) pp. 424–29.Google Scholar
  17. 17.
    N. Iwase, T. Ynazawa, M. Nakahashi, K. Shinozaki, A. Tsuge and K. Anzai, in Proceedings of the 37th IEEE Electronic Components Conference, 1987, pp. 384–391.Google Scholar
  18. 18.
    E. S. Dettmer and H. K. Charles, J. Hybrid Microelectron. 10 (1987).Google Scholar
  19. 19.
    E. S. Dettmer and H. K. Charles, in Proceedings of the International Society for Hybrid Microelectronics, November 1987, p. 19.Google Scholar

Copyright information

© Chapman & Hall 1992

Authors and Affiliations

  • C. E. Newberg
    • 1
  • S. H. Risbud
    • 2
  1. 1.IBM CorporationEast FishkillUSA
  2. 2.Division of Materials Science and Engineering and Materials Research CenterUniversity of CaliforniaDavisUSA

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