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Journal of Materials Science

, Volume 27, Issue 10, pp 2631–2635 | Cite as

1 MHz dielectric constants of phosphosilicate glass films chemically vapour-deposited in the SiH4-PH3-O2-N2 system at low temperature

  • C. Pavelescu
  • D. Serghi
Papers

Abstract

The a.c. relative dielectric constant (RDC) and resistivity of as-deposited and thermally annealed phosphosilicate glass (PSG) films with phosphorus concentrations in the range 0 to 9.3 wt% P were measured at a frequency of 1 MHz and at room temperature. The variations of RDC and resistivity with phosphorus concentration exhibit two regions: (i) for phosphorus concentrations in the range 0 to 4 wt% P, the RDC values of the as-deposited films are higher (above 4.5) than those of N2-annealed films (around 3.5), while the resistivity values of the as-deposited films (around 4 Mω cm) are lower than those of N2-annealed-films (around 8 Mω cm); and (ii) for phosphorus concentrations in the range 4 to 9.3 wt% P, RDC values of as-deposited films decrease to values below those of N2-annealed films, while the values of resistivity of as-deposited and N2-annealed films tend to the same value of 8.4 Mw cm at concentrations above 8 wt% P. The behaviour of the RDC and resistivity of PSG films is interpreted in terms of (i) the evolution of a content of HO, H2O, P-O and P=O polar groups as a function of phosphorus concentration and subsequent annealing processes, and (ii) the structural changes suffered by the films during subsequent annealing processes.

Keywords

Polymer Phosphorus Dielectric Constant Structural Change Annealing Process 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Chapman & Hall 1992

Authors and Affiliations

  • C. Pavelescu
    • 1
  • D. Serghi
    • 1
  1. 1.R&D Centre for Electronic Components (CCSIT-CE)BucharestRomania

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