1 MHz dielectric constants of phosphosilicate glass films chemically vapour-deposited in the SiH4-PH3-O2-N2 system at low temperature
The a.c. relative dielectric constant (RDC) and resistivity of as-deposited and thermally annealed phosphosilicate glass (PSG) films with phosphorus concentrations in the range 0 to 9.3 wt% P were measured at a frequency of 1 MHz and at room temperature. The variations of RDC and resistivity with phosphorus concentration exhibit two regions: (i) for phosphorus concentrations in the range 0 to 4 wt% P, the RDC values of the as-deposited films are higher (above 4.5) than those of N2-annealed films (around 3.5), while the resistivity values of the as-deposited films (around 4 Mω cm) are lower than those of N2-annealed-films (around 8 Mω cm); and (ii) for phosphorus concentrations in the range 4 to 9.3 wt% P, RDC values of as-deposited films decrease to values below those of N2-annealed films, while the values of resistivity of as-deposited and N2-annealed films tend to the same value of 8.4 Mw cm at concentrations above 8 wt% P. The behaviour of the RDC and resistivity of PSG films is interpreted in terms of (i) the evolution of a content of HO, H2O, P-O and P=O polar groups as a function of phosphorus concentration and subsequent annealing processes, and (ii) the structural changes suffered by the films during subsequent annealing processes.
KeywordsPolymer Phosphorus Dielectric Constant Structural Change Annealing Process
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