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Journal of Materials Science

, Volume 27, Issue 10, pp 2580–2588 | Cite as

Ultrafine aluminium nitride powder produced by plasma-assisted chemical vapour deposition of trimethylaluminium

  • Kwang -Ho Kim
  • Chin -Hsiung Ho
  • H. Doerr
  • C. Deshpandey
  • R. F. Bunshah
Papers

Abstract

Plasma-assisted chemical vapour deposition of trimethylaluminium (TMAI) with ammonia (NH3) as reactive gas, was used to prepare aluminium nitride (AIN) ultrafine powder. The effect of r.f. current, susceptor temperature and TMAI concentration on particle formation was studied. High r.f. current activated the gas-phase reaction sufficiently to obtain considerable powder formation. It was observed that increasing susceptor temperature led to an increase of powder formation rate and improved the crystallinity of as-synthesized AIN powder as well. Increasing TMAI concentration, on the other hand, led to an increase of powder formation rate of AIN, while much higher TMAI concentration induced the formation of an aluminium carbide (Al4C3) phase due to dissociation of the methyl radicals instead of the Al-C bond.

Keywords

Carbide Nitride Particle Formation Powder Formation Ultrafine Powder 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Chapman & Hall 1992

Authors and Affiliations

  • Kwang -Ho Kim
    • 1
  • Chin -Hsiung Ho
    • 1
  • H. Doerr
    • 1
  • C. Deshpandey
    • 1
  • R. F. Bunshah
    • 1
  1. 1.Department of Materials Science and EngineeringUniversity of CaliforniaLos AngelesUSA

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