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Journal of Materials Science

, Volume 29, Issue 3, pp 749–753 | Cite as

Mechanism of adhesion improvement in ion-beam mixed Cu/SiO2

  • K. H. Chae
  • H. G. Jang
  • I. S. Choi
  • S. M. Jung
  • K. S. Kim
  • C. N. Whang
Papers

Abstract

A thin copper layer (35 nm) deposited on SiO2 has been subjected to ion-beam mixing with 80 keV Ar+ at room temperature, 550 and 650 K. Interfacial properties of irradiated samples were investigated using Rutherford backscattering spectroscopy, grazing-angle X-ray diffraction, X-ray photo-electron spectroscopy and scratch testing. The adhesion of the copper film was improved by a factor of three at a dose of 1.5 × 1016 Ar+ cm−2 by the ion-beam mixing at room temperature, while the high-temperature ion-beam mixing enhanced the adhesion by a factor of five. Ballistic mixing plays a role in the improvement of adhesion for the room-temperature ion mixing, and the creation of Cu2O phase induced by ion-beam mixing contributes to the enhancement of adhesion at high temperature.

Keywords

Polymer Copper Spectroscopy SiO2 Cu2O 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Chapman & Hall 1994

Authors and Affiliations

  • K. H. Chae
    • 1
  • H. G. Jang
    • 1
  • I. S. Choi
    • 1
  • S. M. Jung
    • 1
  • K. S. Kim
    • 1
  • C. N. Whang
    • 1
  1. 1.Department of PhysicsYonsei UniversitySeolKorea

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