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Journal of Materials Science

, Volume 29, Issue 16, pp 4314–4318 | Cite as

Growth of oriented aluminium nitride films on silicon by chemical vapour deposition

  • A. H. Khan
  • M. F. Odeh
  • J. M. Meese
  • E. M. Charlson
  • E. J. Charlson
  • T. Stacy
  • G. Popovici
  • M. A. Prelas
  • J. L. Wragg
Papers

Abstract

Aluminium nitride films were grown on silicon substrates using the chemical vapour deposition (CVD) method. The properties of the films were studied by scanning electron microscopy (SEM), atomic force microscope (AFM) measurements, X-ray diffraction and Raman scattering. The resulting films were strongly textured and had a preferential orientation with the c-axis normal to the surface, the Raman spectra showed two peaks at 607 and 653 cm−1 and two large bands at 750 and 900 cm−1 of smaller intensity. Both the macro- and micro-Raman spectra showed the same peaks.

Keywords

Polymer Aluminium Silicon Electron Microscopy Scanning Electron Microscopy 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Chapman & Hall 1994

Authors and Affiliations

  • A. H. Khan
    • 1
  • M. F. Odeh
    • 1
  • J. M. Meese
    • 1
  • E. M. Charlson
    • 1
  • E. J. Charlson
    • 1
  • T. Stacy
    • 1
  • G. Popovici
    • 1
    • 2
  • M. A. Prelas
    • 1
    • 2
  • J. L. Wragg
    • 1
    • 3
  1. 1.Electrical and Computer EngineeringUniversity of MissouriColumbiaUSA
  2. 2.Nuclear EngineeringUniversity of MissouriColumbiaUSA
  3. 3.Physics and AstronomyUniversity of MissouriColumbiaUSA

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